This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance.

Features:-

• 3 A, 20 V.

                    RDS(ON) = 0.035 Ω @ VGS = 4.5V

                    RDS(ON) = 0.050 Ω @ VGS = 2.5V

• Low gate charge (7nC typical)
• High Performance Trench Technology for Extremely Low RDS(ON)
• High power and current handling capability

Applications:-

• DC/DC converter
• Load switch

Specifications:-

• Drain-Source Voltage: 20V
• Gate-Source Voltage: ±8V
• Drain Current – Continuous: 3A
• Drain Current – Pulsed: 20A
• Maximum Power Dissipation: 0.5-0.46W
• Operating and Storage Junction Temperature Range: -55 to +150°C

Package Includes:-

1 x FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET