Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

• -1.9 A, -30 V

                    RDS(ON) = 0.090Ω @ VGS = -4.5V

                    RDS(ON) = 0.060Ω @ VGS = -10V

• Industry standard outline SOT-23 surface mount package using proprietary Super SOT-23 design for superior thermal and electrical capabilities.
• High density cell design for extremely low RDS(ON).
• Exceptional on-resistance and maximum DC current capability.

Specifications:-

• Drain-Source Voltage:  -30V
• Gate-Source Voltage: ±20V
• Drain Current – Continuous: -1.9A
• Drain Current – Pulsed: -10A
• Maximum Power Dissipation: 0.5-0.46W
• Operating and Storage Junction Temperature Range: -55 to +150°C

Package Includes:-

1 x FDN357P MOSFET - (SMD SOT-23 Package) - 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET