This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

• -2 A, -30 V
  

                    RDS(ON) = 0.080Ω @ VGS = -10V

                    RDS(ON) = 0.125Ω @ VGS = -4.5V

• Low gate charge (5nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability

Specifications:-

• Drain-Source Voltage:  -30V
• Gate-Source Voltage: ±20V
• Drain Current – Continuous: -2A
• Drain Current – Pulsed: -20A
• Maximum Power Dissipation: 0.5-0.46W
• Operating and Storage Junction Temperature Range: -55 to +150°C

Package Includes:-

1 x FDN360P MOSFET - (SMD SOT-23 Package) - 30V 2A P-Channel Logic Level MOSFET