K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features:-
• 9A,900V, RDS(on)(Max1.1Ω)@VGS=10V
• Ultra-low Gate charge(Typical 58nC)
• Fast Switching Capability
• 100%Avalanche Tested
• Maximum Junction Temperature Range(150℃)
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 900V |
| Continuous Drain Current (Id) | 9A |
| Drain-Source Resistance (Rds On) | 1.1Ohms |
| Gate-Source Voltage (Vgs) | 30V |
| Gate Charge (Qg) | 58 nC |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 150W |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
* Product Images are shown for illustrative purposes only and may differ from actual product.
2SK2611 MOSFET - 900V 9A N-Channel Power MOSFET TO-3PN Package
- Product Code: EC-2283
- Availability: 94
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Rs.123.90