MOSFET

20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance m..

2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. T..

2SK1118 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK1120  utilize advanced processing techniques to achieve extremely low on-resistance per sili..

2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar..

2SK2225 utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar..

K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's propri..

2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprie..

2SK2717 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK2968 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK3550 is new generation of high voltage MOSFET family that is utilizing an advanced charge ba..

2SK3569 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK3878 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK962 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance ..

38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been e..