MOSFET

20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance m..

2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. T..

2SK1118 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK1120  utilize advanced processing techniques to achieve extremely low on-resistance per sili..

2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar..

2SK2225 utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar..

K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's propri..

2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprie..

2SK2717 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK2968 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK3550 is new generation of high voltage MOSFET family that is utilizing an advanced charge ba..

2SK3569 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK3878 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance..

2SK962 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance ..

38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been e..

Description:-BS107 N-Channel Mosfet is a type of field-effect transistor (FET) It has an insulated g..

BS170 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance m..

FDA50N50 MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFE..

FDP090N10 N-Channel MOSFET is produced using  advanced PowerTrench® process that has been tailo..

IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely l..

IRF1404 Seventh Generation HEXFET® Power MOSFETs utilize advanced processing techniques to achieve e..

IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to a..

IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® P..

IRF2807 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremel..

IRF3205 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremel..