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  • IRF1405 MOSFET - 55V 169A N-Channel HEXFET Power MOSFET TO-220 Package

IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.


Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Repetitive avalanche allowed up to Tjmax

• Lead-free


Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 169A
Drain-Source Resistance (Rds On) 5.3mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 260 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 330W


Related Documents

 IRF1405 MOSFET Datasheet 

Brand/Manufacturer Generic
Country Of Origin China
Packer / Importer Address Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India.
MRP Rs. 84.96 (Inclusive of all Taxes)
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IRF1405 MOSFET - 55V 169A N-Channel HEXFET Power MOSFET TO-220 Package

  • Product Code: EC-1887
  • Availability: 942
  • Rs.99.00
  • (Excluding 18% GST)

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