Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Features :-

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

Specifications :-

• Drain-Source Breakdown Voltage min : 500V
• Temperature Coefficient type : 0.78V/°C
• Gate-Source Threshold Voltage min : 2.0V
• Gate-Source Threshold Voltage max : 4.0V
• Gate-Source Leakage max : +100nA
• Drain-Source On-State Resistance : 0.85Ω
• Forward Transconductance min : 5.3S

Package Includes :-

1 X IRF440 MOSFET - 500V 8.8A N-Channel Power MOSFET TO-247 Package