These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits

Specifications :-

• Drain to Source Breakdown Voltage Minimum : -80V
• Gate to Threshold Voltage Minimum : -2.0V
• Gate to Threshold Voltage Maximum :- -4.0V
• Gate to Source Leakage Current Maximum :- +100nA
• On-State Drain Current Minimum : -2.5V

Package Includes :-

1 X IRF9513 MOSFET - 80V 2.5A P-Channel Power MOSFET TO-220 Package