Third generation power MOSFETs from the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry

Features :-

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements 

Specifications :-

• Drain-source breakdown voltage Min : 900V
• Temperature coefficient : 1.1V/°C
• Gate-source threshold voltage min : 2.0V
• Gate-source threshold voltage max : 4.0V
• Gate-source leakage max : +100nA
• Drain-source on-state resistance max : 8.0Ω
• Forward transconductance min : 0.60S 

Package includes :-

1 X IRFBF20 MOSFET - 900V 1.7A N-Channel Power MOSFET TO-220 Package