IRF3205 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features:-
• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Fully avalanche rated
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 110A |
| Drain-Source Resistance (Rds On) | 8mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 146 nC |
| Operating Temperature Range | -55 - 175°C |
| Power Dissipation (Pd) | 200W |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
* Product Images are shown for illustrative purposes only and may differ from actual product.
IRF3205 MOSFET - 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package
- Product Code: EC-0374
- Availability: 5035
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Rs.41.30