Third generation Power MOSFETs from the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features :-

• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

Specifications :-

• Drain-Source Breakdown Voltage Minimum : 60V
• Temperature Coefficient : 0.063V/°C
• Gate-Source Threshold Voltage Minimum : 2.0V
• Gate-Source Threshold Voltage Maximum : 4.0V
• Gate-Source Leakage Maximum : +100nA
• Zero Gate Voltage Drain Current  Maximum : 250μA
• Drain-Source On-State Resistance Maximum : 0.20Ω
• Forward Transconductance minimum : 2.4S 

Package Includes :-

1 X IRFZ14N MOSFET - 60V 10A N-Channel Power MOSFET TO-220 Package