IRFBE30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 800V |
| Continuous Drain Current (Id) | 4.1A |
| Drain-Source Resistance (Rds On) | 3Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 78 nC |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 125W |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
| MRP | Rs. 120.36 (Inclusive of all Taxes) |
* Product Images are shown for illustrative purposes only and may differ from actual product.
IRFBE30 MOSFET - 800V 4.1A N-Channel Power MOSFET TO-220 Package
- Product Code: EC-2227
- Availability: 249
-
Rs.102.00
- (Excluding 18% GST)