Search - FET
Products meeting the search criteria
Product Compare (0)
BFW10 is a semiconductor device used to amplify or switch electronic signals and electrical power. I..
Rs.115.00
BFW11 is a semiconductor device used to amplify or switch electronic signals and electrical power. I..
Rs.115.00
Description:-BS107 N-Channel Mosfet is a type of field-effect transistor (FET) It has an insulated g..
Rs.35.00
BS170 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance m..
Rs.12.50
The BSS138 is a SMD Power MOSFET Transistor (N-Channel). The following are the features:-• Low On-Re..
Rs.7.50
BUZ90 is a three layer NPN or PNP device within the working range, the collector current IC is a fun..
Rs.56.00
FDA50N50 MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFE..
Rs.425.00
This P-Channel 1.8V specified MOSFET uses advanced low voltage Power Trench process. It has been opt..
Rs.14.00
This P-Channel 2.6V specified MOSFET uses advanced low voltage Power Trench process. It has been opt..
Rs.14.00
Super SOT-23 N-Channel logic level enhancement mode power field effect transistors are produced usin..
Rs.14.00
This P-Channel 2.5V specified MOSFET uses advanced low voltage Power Trench process. It has been opt..
Rs.14.00
This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especia..
Rs.14.00
This P−Channel Logic Level MOSFET is produced uses advanced low voltage Power Trench process that ha..
Rs.14.00
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced usin..
Rs.14.00
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced usin..
Rs.14.00
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been espe..
Rs.14.00
FDP090N10 N-Channel MOSFET is produced using advanced PowerTrench® process that has been tailo..
Rs.125.00
The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilate..
Rs.105.00
HCPL-3131 - A3131 IC - Power MOSFET/IGBT Gate Drive Optocoupler IC..
Rs.165.00
IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely l..
Rs.52.00
IRF1404 Seventh Generation HEXFET® Power MOSFETs utilize advanced processing techniques to achieve e..
Rs.87.00
IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to a..
Rs.99.00
IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® P..
Rs.95.00
IRF2807 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremel..
Rs.57.00
IRF3205 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremel..
Rs.35.00
Showing 51 to 75 of 152 (7 Pages)