2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features:-
• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 200mA |
| Drain-Source Resistance (Rds On) | 5Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Configuration | Single |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 400mW |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
| MRP | Rs. 10.62 (Inclusive of all Taxes) |
* Product Images are shown for illustrative purposes only and may differ from actual product.
2N7000 FET - N-Channel Enhancement Mode FET TO-92 Package
- Product Code: EC-0610
- Availability: 1566
-
Rs.8.00
- (Excluding 18% GST)