2SK1120 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Features:-
• Low drain−source ON resistance
• High forward transfer admittance
• Low leakage current
• Enhancement mode
• RDS (ON) = 1.5 Ω (typ.)
• |Yfs| = 4.0 S (typ.)
• IDSS = 300 μA (max) (VDS = 800 V)
• 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1000V |
| Continuous Drain Current (Id) | 8A |
| Drain-Source Resistance (Rds On) | 1.8Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 120 nC |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 150W |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
* Product Images are shown for illustrative purposes only and may differ from actual product.
2SK1120 MOSFET - 1000V 8A N-Channel Power MOSFET TO-3PN Package
- Product Code: EC-2280
- Availability: 360
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Rs.159.30
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Wholesale Pricing
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