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  • H11F1 Photo FET Optocoupler IC DIP-6 Package

The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. 


• As a remote variable resistor 

• ≤ 100Ω to ≥ 300 MΩ 

• ≥ 99.9% linearity 

• ≤ 15 pF shunt capacitance 

• ≥ 100 GΩ I/O isolation resistance As an analog switch 

• Extremely low offset voltage 

• 60 Vpk-pk signal capability 

• No charge injection or latch-up 

• ton, toff ≤ 15 µS 

• UL recognized (File #E90700) 

• VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)  


 As a variable resistor-

    Isolated variable attenuator 

    Automatic gain control 

    Active filter fine tuning/band switching 

As an analog switch-

    Isolated sample and hold circuit 

    Multiplexed, optically isolated A/D conversion 


Symbol Parameter Value Unit
IF Forward current 60 mA
PD Power dissipation 100 mW
VR Reverse Voltage 5 V
Tstg Storage temperature range - 55 to + 150 °C
TOPR Operating Temperature - 55 to + 150 °C
TSOL Lead Solder Temperature 260 for 10 sec °C
F(pk) Forward Current - Peak (10 µs pulse, 1% duty cycle) 1 A
BV4-6 Breakdown Voltage (either polarity) ±30 V

Related Document:-

 H11F1 IC Data Sheet

Brand/Manufacturer Generic
Country Of Origin China
Packer / Importer Address Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India.
MRP Rs. 135.7 (Inclusive of all Taxes)
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H11F1 Photo FET Optocoupler IC DIP-6 Package

  • Product Code: EC-1958
  • Availability: 529
  • Rs.105.00
  • (Excluding 18% GST)


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