• 1N5822 Schottky Barrier Diode

The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. 

Features:-

Extremely Low VF 

Low Power Loss/High Efficiency 

Low Stored Charge, Majority Carrier Conduction 

Shipped in plastic bags, 500 per bag 

Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to the part number 

Pb-Free Packages are Available 

Mechanical Characteristics:-

 Case: Epoxy, Molded 

• Weight: 1.1 Gram (Approximately) 

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

• Polarity: Cathode indicated by Polarity Band 

Specification:-

Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 40 V
VRWM Working Peak Reverse Voltage 40 V
VR DC Blocking Voltage 40 V
VR(RMS) RMS Reverse Voltage 28 V
VRSM Non−Repetitive Peak Reverse Voltage 48 V
IO Average Rectified Output Current 3 A
IFSM Non-Repetitive Peak Forward Surge Current 80 A
TJ Operating Junction Temperature Range − 65 to +125 °C
 Tstg Storage Temperature Range − 65 to +125 °C


Related Document:-

 IN5822 Diode Data Sheet 

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1N5822 Schottky Barrier Diode

  • Product Code: EC-0273
  • Availability: 8581
  • Rs.17.00
  • Rs.12.00