• IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package

IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.


Features

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC


Detailed Specifications

 

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 33A
Drain-Source Resistance (Rds On) 44mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 71 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 130W


Related Documents

 IRF540 MOSFET Datasheet 

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IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package

  • Product Code: EC-0300
  • Availability: 941
  • Rs.25.00
  • (Excluding 18% GST)