MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• High DC current gain
• Low collector−emitter saturation voltage
• High current−gain − bandwidth product
• Annular construction for low leakage
• These devices are Pb−Free and are RoHS compliant
Detailed Specifications:-
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 40VDC |
| Collector−Base Voltage (VCBO) | 25VDC |
| Emitter−Base Voltage (VEBO) | 8VDC |
| Continuous Collector Current (Ic) | 5ADC |
| Continuous Base Current (Ib) | 1ADC |
| Power Dissipation (Pd) | 15W |
| Operating Temperature Range | -65 - 150°C |
| DC Current Gain (hFE) | 45-180 |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
* Product Images are shown for illustrative purposes only and may differ from actual product.
MJE200 NPN Power Transistor 25V 5A TO-126 Package
- Product Code: EC-0636
- Availability: 1206
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Rs.28.32