MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.


• High DC current gain

• Low collector−emitter saturation voltage

• High current−gain − bandwidth product

• Annular construction for low leakage

• These devices are Pb−Free and are RoHS compliant

Detailed Specifications:-

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 40VDC
Collector−Base Voltage (VCBO) 25VDC
Emitter−Base Voltage (VEBO) 8VDC
Continuous Collector Current (Ic) 5ADC
Continuous Base Current (Ib) 1ADC
Power Dissipation (Pd) 15W
Operating Temperature Range -65 - 150°C
DC Current Gain (hFE) 45-180

Related Documents:-

 MJE200 Transistor Datasheet

Brand/Manufacturer Generic
Country Of Origin China
Packer / Importer Address Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India.
Write a review
Please login or register to review

* Product Images are shown for illustrative purposes only and may differ from actual product.

MJE200 NPN Power Transistor 25V 5A TO-126 Package

  • Product Code: EC-0636
  • Availability: 1225
  • Rs.28.32